by268 / by269 document number 86005 rev. 1.6, 13-apr-05 vishay semiconductors www.vishay.com 1 949539 fast avalanche sinterglass diode features ? glass passivated junction hermetically sealed package lead (pb)-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications high voltage fast re ctification diode mechanical data case: sod-57 sintered glass case terminals: plated axial leads, solderable per mil-std-750, method 2026 polarity: color band denotes cathode end mounting position: any weight: approx. 369 mg parts table absolute maximum ratings t amb = 25 c, unless otherwise specified maximum thermal resistance t amb = 25 c, unless otherwise specified part type differentiation package by268 v r = 1400 v; i fav = 0.8 a sod-57 by269 v r = 1600 v; i fav = 0.8 a sod-57 parameter test condition part symbol value unit peak reverse voltage, non repetitive by268 v rsm 1600 v by269 v rsm 1800 v reverse voltage see electrical characteristics by268 v r 1400 v by269 v r 1600 v peak forward surge current t p = 10 ms, half sinewave i fsm 20 a average forward current i fav 0.8 a junction and storage temperature range t j = t stg - 55 to + 175 c non repetitive reverse avalanche energy i (br)r = 0.4 a e r 10 mj parameter test condition part symbol value unit junction ambient on pc board with spacing 25 mm r thja 100 k/w l = 10 mm, t l = constant r thja 45 k/w e2
www.vishay.com 2 document number 86005 rev. 1.6, 13-apr-05 by268 / by269 vishay semiconductors electrical characteristics t amb = 25 c, unless otherwise specified typical characteri stics (tamb = 25 c unless otherwise specified) parameter test condition part symbol min ty p. max unit forward voltage i f = 0.4 a v f 1.25 v reverse current v r = 1400 v by268 i r 12 a v r = 1600 v by269 i r 12 a v r = 1400 v, t j = 100 c by268 i r 15 a v r = 1600 v, t j = 100 c by269 i r 15 a reverse recovery time i f = 0.5 a, i r = 1 a, i r = 0.25 a t rr 400 ns figure 1. typ. thermal resistance vs. lead length figure 2. forward current vs. forward voltage 0 0 20 40 60 80 120 r Ctherm.resist. junction/ ambient ( k/w) thja l C lead length ( mm ) 94 9090 51015 25 30 20 100 ll t l = constant i - forward current ( a) 0.001 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 2.5 v f - forward v oltag e(v) 16412 f t j =25 c t j =175 c figure 3. max. average forward current vs. ambient temperature figure 4. reverse current vs. junction temperature 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 20 40 60 80 100 120 140 160 180 t amb - ambient temperature ( c) 16413 i - average forward current ( a ) fav v r =v rrm half sinewave r thja =45k/w l=10mm r thja =100 k/w pcb:d=25mm 1 10 100 1000 25 50 75 100 125 150 175 t j - junction t emperature ( c) 16414 v r =v rrm i - reverse current ( a) r
by268 / by269 document number 86005 rev. 1.6, 13-apr-05 vishay semiconductors www.vishay.com 3 package dimensions in mm (inches) figure 5. max. reverse power dissipation vs. junction temperature 0 100 200 300 400 500 600 700 800 900 25 50 75 100 125 150 175 t j C junction temperature ( c) 16415 v r =v rrm p C reverse power dissipation ( mw ) r p r -limit @100 % v r p r -limit @80%v r figure 6. diode capacitance vs. reverse voltage 0 5 10 15 20 25 30 35 0.1 1 10 100 v r C reverse voltag e(v) 16416 c C diode capacitance ( pf ) d f=1mhz cathode identification 0.82 (0.032) max. sintered glass case sod-57 94 9538 26(1.014) min. 26(1.014) min. iso method e 3.6 (0.140)max. 4.0 (0.156) max.
www.vishay.com 4 document number 86005 rev. 1.6, 13-apr-05 by268 / by269 vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate rele ases of those substances in to the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its po licy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buy er use vishay semiconductors products for any unintended or unauthorized application, the buyer sh all indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
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